onsemi Launches GaNEXUS GaN FETs

onsemi launched GaNEXUS, a gallium nitride (GaN) power semiconductor portfolio aimed at AI data center power shelves, battery backup units, and motor drives, on June 9, 2026. The first parts span 40V to 650V and target the 48V intermediate bus converters and high-voltage DC-DC stages that feed AI server racks, where switching losses in silicon devices waste power and force larger magnetics.

onsemi says GaNEXUS cuts magnetics size by 30% to 60%, lifts power density by 1.5x to 2x, and improves efficiency by 0.5% to 2% against silicon, depending on topology. The line includes a 650V “GaNEXUS Smart” part that integrates gate drive and protection on-die, and it ships in thermally enhanced TOLL bottom-cooled, TOLT top-cooled, and dual-cooled 3.3 mm and 5×6 mm packages with industry-standard footprints for dual sourcing. Parts are sampling now.

What’s Genuinely New vs Rebrand

The integrated 650V GaNEXUS Smart device is the real shift. It folds the gate driver, protection, and fault handling that engineers normally wire externally into one package, the same pitch as Texas Instruments’ LMG3522R030, a 650V, 30 milliohm GaN FET that bundles driver, protection, and temperature reporting. onsemi has built its power business on silicon carbide through its EliteSiC line; GaNEXUS is a deliberate move into GaN, where Navitas and Infineon hold the lead and Nexperia is expanding its own 650V family. onsemi did not disclose pricing.

The standard-footprint packaging is a competitive tell. By matching established TOLL and TOLT outlines rather than a proprietary footprint, onsemi is pitching GaNEXUS as a drop-in second source for buyers wary of single-sourcing GaN from Navitas or Infineon, a real concern for hyperscalers locking in multi-year rack designs. That positioning leans on onsemi’s existing power-supply relationships from its EliteSiC silicon-carbide business, where it already sits on hyperscale bills of materials.

Why It Matters

AI racks are moving to 800V DC distribution to carry more power down the same copper, and GaN’s faster switching is what makes compact, high-efficiency conversion at those voltages practical. A half-point of efficiency at hyperscale turns into megawatts of recovered capacity across a fleet, which is why hyperscalers now scrutinize the power shelf as closely as the accelerator. The open question is supply: onsemi GaN volumes trail its SiC output, and design wins will hinge on whether it ships at the scale Navitas and Infineon already serve.

Sources

• onsemi, onsemi Introduces GaNEXUS Gallium Nitride Power Portfolio (June 9, 2026)
• Semiconductor Today, onsemi launches GaNEXUS gallium nitride power portfolio
• Power Electronics News, onsemi Launches GaNEXUS GaN Power Portfolio
• Compound Semiconductor, Onsemi Introduces GaNEXUS GaN portfolio

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