NoMIS Power Shows a 6.5 kV SiC MOSFET Blocking Over 8 kV, With Production Set for Q4 2026

NoMIS Power, a silicon carbide device maker at the Albany NanoTech Complex in Albany, New York, said on August 6, 2026 that it has tested a large-die 6.5 kV SiC MOSFET. The part measured more than 8 kV of blocking voltage, 90 milliohms of on-resistance and 55 amps of drain current. The company samples the device to U.S. customers now. Production starts in the fourth quarter of 2026.

The 6.5 kV class matters because silicon still holds that voltage step. Designers build medium-voltage converters at that rating around silicon IGBTs. Those parts switch slowly, so the magnetics stay bulky and the cooling stays heavy. A SiC device at the same rating switches faster and tolerates more heat. The passive components then shrink. That is the trade every solid-state transformer designer wants.

Specifications

NoMIS reported three numbers: over 8 kV blocking, 90 milliohms on-resistance and 55 amps of drain current. The 8 kV figure is a margin claim, not a rating. A part specified at 6.5 kV should survive well above its nameplate, and NoMIS uses that headroom to argue the die holds up.

The 6.5 kV part sits on top of a 3.3 kV family already in production. That family has three variants: 80 milliohms at 34 amps, 50 milliohms at 55 amps, and 25 milliohms at 105 amps. NoMIS also sells 3.3 kV bidirectional switches from 50 to 160 milliohms, plus a 500 amp half-bridge module. Packaging covers TO-247-4L-HC and bare die.

The roadmap runs higher. NoMIS put 10 kV MOSFETs, diodes and junction-barrier Schottky FETs into development alongside SiC IGBTs. It targets fourth-quarter sampling for those, then a longer path toward 20 kV.

Market Context

The named applications are HVDC transmission, solid-state transformers, pulsed power, rail traction, megawatt-scale EV charging, aerospace and defense. The 3.3 kV suppliers already chase the same list. Wolfspeed, Microchip and onsemi all pushed 3.3 kV SiC parts at the solid-state transformer market this year. Above 3.3 kV the commercial field thins out fast. That gap is what NoMIS aims at.

The company has grid history. It joined the ARPA-E DC-GRIDS consortium earlier in 2026 to supply 3.3 kV SiC MOSFETs for high-voltage DC submodules. U.S. Department of Energy and Department of War programs fund the development work.

“High-voltage SiC is becoming foundational to data-center, grid, aerospace, and defense power systems,” said Dr. Adam Morgan, co-founder and chief executive.

Why It Matters

A single 55 amp die does not build a converter. An HVDC submodule or a megawatt charging stage draws hundreds of amps. A designer therefore parallels devices, or waits for a module. NoMIS ships a 500 amp half-bridge module at 3.3 kV today. The 6.5 kV equivalent is the part that would actually move a bill of materials, and the company has not announced one.

Watch the fourth quarter of 2026. Sampling means engineering quantities to a few design teams. Production means a datasheet, a lead time and a price. Anyone specifying a 6.5 kV converter this year still builds it around silicon IGBTs, or around a paralleled 3.3 kV SiC stack. That is what a purchase order buys today.

Sources

• NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs (PR Newswire, August 6, 2026)
• NoMIS demos 6.5 kV SiC MOSFET (Compound Semiconductor, August 12, 2026)
• 6.5-kV SiC MOSFET reaches 8-kV blocking (EDN)

Related Coverage

• Wolfspeed Launches 3.3 kV SiC Power Modules Claiming 42% Lower: Similar SiC power module development
• onsemi EliteSiC Is the Third Silicon Carbide MOSFET Supplier the Solid-State Transformer Industry Depends On Behind Wolfspeed and Infineon: SiC MOSFET supplier for solid-state transformers
• Wolfspeed’s 200mm SiC Wafer Capacity Is the Biggest 2026 Bottleneck for Solid-State Transformers: SiC wafer capacity for solid-state transformers
• Silicon Carbide vs Gallium Nitride: Why Every Medium-Voltage: Silicon Carbide technology comparison